Spin-based electrometry with solid-state defects

ABSTRACT

Sensing the electric or strain field experienced by a sample containing a crystal host comprising of solid state defects under a zero-bias magnetic fields can yield a very sensitive measurement. Sensing is based on the spin states of the solid-state defects. Upon absorption of suitable microwave (and optical) radiation, the solid-state defects emit fluorescence associated with hyperfine transitions. The fluorescence is sensitive to electric and/or strain fields and is used to determine the magnitude and/or direction of the field of interest. The present apparatus is configured to control and modulate the assembly of individual components to maintain a zero-bias magnetic field, generate an Optically Detected Magnetic Resonance (ODMR) spectrum (with or without optical excitation) using appropriate microwave radiation, detect signals based on the hyperfine state transitions that are sensitive to electric/strain fields, and to quantify the magnitude and direction of the field of interest.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the priority benefit of U.S. Application No.62/355,448, which was filed on Jun. 28, 2016, and is incorporated hereinby reference in its entirety.

GOVERNMENT SUPPORT

This invention was made with Government support under Contract Nos.FA8721-05-C-0002 and FA8702-15-D-0001 awarded by the U.S. Air Force. TheGovernment has certain rights in the invention.

BACKGROUND

The development of electric field sensors, or electrometers, fordetecting low-frequency and weak signals with high spatial resolution isuseful for areas of research ranging from particle physics andatmospheric sciences to electronic diagnostics and neuroscience.Commonly available electrometers that rely on electrostatic inductioninclude field mills and dipole antennas. They are physically limited insize by the wavelength of the electric field of interest therebylimiting the possibility of miniaturization at lower frequencies. Recentwork towards the development of miniaturized electrometers includeutilizing the electro-optic effect within solid-state crystals withinone arm of a fiber-based Mach-Zehnder interferometer or theelectric-field induced shifts of atom-based sensors, such as trappedions or Rydberg atoms. However, such miniaturized sensors typicallysuffer from narrow detection bandwidths and require large peripheralequipment.

Previous demonstrations of electric-field sensing with a single nitrogenvacancy (NV) under ambient conditions yielded sensitivities of 891±21 Vcm⁻¹ Hz^(−1/2) (DC) and 202±6 V cm¹ Hz^(−1/2) (AC). Although a single NVwas used to detect the charge-state of a neighboring NV, the noiseproperties of the charge-state fluctuations of the NV remains an activearea of investigation.

SUMMARY

Embodiments of the present invention include methods and apparatus formeasuring electric fields. An example electrometer comprises asolid-state host having an ensemble of color centers, a magnetic fieldgenerator in electromagnetic communication with the ensemble of colorcenters, a detector in optical communication with the solid-state host,and a processor operably coupled to the detector. In operation, themagnetic field generator applies a zero-bias magnetic field to theensemble of color centers. The detector measures an optically detectedmagnetic resonance (ODMR) spectrum of the ensemble of color centerswhile the ensemble of color centers is subject to the zero-bias magneticfield. This ODMR spectrum indicates a shift in a frequency of a groundstate and/or an excited state of the ensemble of color centers caused byan electric field. And the processor estimates a magnitude of theelectric field based on the ODMR spectrum.

There may be at least 10¹⁰ color centers in the ensemble of colorcenters.

The magnetic field generator may be configured to cancel an ambientmagnetic field, including the Earth's magnetic field.

The electrometer may further include a light source in opticalcommunication with the solid-state host and a microwave source inelectromagnetic communication with the solid-state host. The lightsource illuminates the ensemble of color centers with light selected tospin polarize the ensemble of color centers. And the microwave sourceapplies a microwave to the ensemble of color centers. In some cases, theelectrometer also includes a stripline, bonded to the solid-state hostand in electrical communication with the microwave source, to guide themicrowave.

The processor may estimate a shift in the frequency of the ground stateof the ensemble of color centers caused by a change in temperature ofthe ensemble of color centers. It may estimate the magnitude of theelectric field over a frequency range of 0 Hz to 100 Hz with a shot-noselimited sensitivity of 1 V/cm √Hz. It may estimate a direction of theelectric field based on the ODMR spectrum. And it may estimate a noisespectral density of electric field fluctuations within the solid-statehost based on the ODMR spectrum.

It should be appreciated that all combinations of the foregoing conceptsand additional concepts discussed in greater detail below (provided suchconcepts are not mutually inconsistent) are contemplated as being partof the inventive subject matter disclosed herein. In particular, allcombinations of claimed subject matter appearing at the end of thisdisclosure are contemplated as being part of the inventive subjectmatter disclosed herein. It should also be appreciated that terminologyexplicitly employed herein that also may appear in any disclosureincorporated by reference should be accorded a meaning most consistentwith the particular concepts disclosed herein.

BRIEF DESCRIPTIONS OF THE DRAWINGS

The skilled artisan will understand that the drawings primarily are forillustrative purposes and are not intended to limit the scope of theinventive subject matter described herein. The drawings are notnecessarily to scale; in some instances, various aspects of theinventive subject matter disclosed herein may be shown exaggerated orenlarged in the drawings to facilitate an understanding of differentfeatures. In the drawings, like reference characters generally refer tolike features (e.g., functionally similar and/or structurally similarelements).

FIG. 1A shows an example nitrogen vacancy center.

FIG. 1B depicts a generalized energy level diagram as an example showingthe state transitions of an exemplary NV center.

FIG. 2A shows a transition of an example NV center from the ground stateto an excited state and back through radiative and non-radiativepathways to illustrate spin polarization.

FIG. 2B shows example state transitions with labelled spin states.

FIG. 2C shows example spin states at the ground state includinghyperfine states.

FIG. 3 shows an example numerical simulation of the effects of electricfield on an optically detected magnetic resonance (ODMR) spectrumresulting from spin state transitions of hyperfine manifolds of an NVcenter.

FIG. 4A shows a generalized energy level diagram for an example NVcenter indicating the spin states in the ground state and thecontributions of electric and strain fields and changes in the ODMRspectrum from fine structure transitions (plot at right).

FIG. 4B shows an ODMR spectrum from hyperfine structure transitionsindicating changes in the splitting induced by a transverse electricfield.

FIG. 5 shows an example flowchart of a method to measure electric/strainfields using an electrometer based on this spin state of an ensemble ofsolid-state defects.

FIG. 6 shows ODMR spectra of a single NV center under a 0-Gauss magneticfield (upper trace) and a 43-Gauss magnetic field (lower trace). Theleft resonances are excited state and the right ones are the groundstate.

FIG. 7 shows an example block diagram of an apparatus used to measureelectric/strain fields.

FIGS. 8A and 8B shows an example electric/strain sensing apparatus.

FIG. 9 shows another example assembly of the apparatus with some of theelements mounted on an optical table.

FIG. 10A shows measured ODMR spectral shifts (left) and a correspondingsignal from a lock-in amplifier (LIA) (right) read from NVs in theground state.

FIG. 10B shows measured ODMR shifts and the corresponding LIA signal,overlaid, from NVs in the excited state in an exemplary sample under azero-bias magnetic field.

FIG. 11A shows measured and calculated ODMR spectra with variousmicrowave (MW) field amplitudes and an applied electric field under azero-bias magnetic field.

FIG. 11B shows results from exemplary numerical simulations underexemplary applied voltage.

FIG. 11C shows numerically calculated detuning shifts corresponding tothe various applied electric fields, from example experiments.

FIG. 12 shows the electric field dependence of the detuning shifts of anensemble of NVs.

FIG. 13 shows the electric field sensitivity on electric field amplitudeof an example apparatus and method.

FIG. 14 shows an example Allan stability plot of the detuning shiftsduring electric field sensing.

FIG. 15A shows a time trace from channel 1 of a lock-in amplifier(corresponding to measurement of strain at zero electric field on thehyperfine 0− sensing transition).

FIG. 15B is a plot of noise spectral density for the time trace of FIG.15A.

FIG. 16A shows a time trace from channel 2 of the lock-in amplifier ofFIG. 15A (corresponding to measurement of strain on the hyperfine 0+transition).

FIG. 16B is a plot of noise spectral density for the time trace of FIG.16A.

FIG. 17A shows the noise spectral density of the direct sum of channels1 and 2 of the lock-in amplifier (corresponding to common modefluctuations, typically caused by temperature fluctuations) shown inFIGS. 15A and 16A.

FIG. 17B shows the noise spectral density of the direct difference ofchannels 1 and 2 of the lock-in amplifier (corresponding to electricfield fluctuations, while canceling temperature fluctuations) shown inFIGS. 16A and 17A.

FIG. 18A shows an exemplary measurement of applied electric field intime using one example type of hyperfine state transitions of anensemble of NVs.

FIG. 18B shows overlaid time traces showing the differential effect ofapplied electric field from simultaneously measuring transitionsassociated with two hyperfine states, +0 and −0.

DETAILED DESCRIPTION Introduction

Electric field sensors, or electrometers, for detecting weak,low-frequency signals with high spatial resolution have a wide range ofapplications, from particle physics and atmospheric sciences toelectronic diagnostics and neuroscience. Commonly availableelectrometers rely on electrostatic induction and are physically limitedin size by the wavelength of the electric field they can sense. Methodsand apparatus for electric field sensing based on the spin state ofsolid-state defects (for example, nitrogen vacancy (NV) centers or NVs),lend themselves to miniaturization to address this requirement. Otheradvantages of using solid state defects for local electric/strain fieldsensing include the ability to place the electrometer with precision atthe desired spatial location, to precisely control the size of theelectrometer to measure an appropriately sized (localized) field, and toless-invasively measure field experienced by a sample. Additionaladvantages of using optically active solid state defects like NVsinclude remote detection of electric fields in both hostile and delicateenvironments and no need to calibrate the applied microwave frequencies.

Without being bound or limited by any particular theory, thisapplication discloses a theory of operation and example variations ofmethods and apparatus for measuring and quantifying transitions betweenhyperfine states (sensitive to electric strain fields) of an ensemble ofnitrogen vacancy centers (NVs). It includes example experimentalmeasurements to determine the magnitude (and/or direction) of anexternal electric field under ambient temperature and zero-bias magneticfield.

Specifically, in example experiments, measuring based on an ensemble ofNVs results in better sensitivity (up to 1 V cm⁻¹ Hz^(−1/2) even for DCfields compared to 891±21 V cm⁻¹ Hz^(−1/2) (DC) from previousmeasurements using single NVs. The zeroing of ambient magnetic fieldalso results in increased sensitivity. The ability to sense weakelectric fields at ambient temperature using these methods andapparatuses vastly increases the range of applicability to include, forexample, electric field sensing in biological samples. Additionally, thetechnology presented here can also account for fluctuations intemperature in the measurements by registering a baseline measurement orby independently measuring temperature fluctuations to improve electricfield sensitivity. The following sections and the associated figuresprovide detailed description of examples methods and the apparatus ofusing ensembles of NVs or other color centers under zero-bias magneticfield to make sensitive electric-field and/or strain measurements.

Theory

Nitrogen Vacancies

A crystalline solid has a crystal structure with repeating units ofatoms or molecules over lattice points. When this arrangement isimperfect, there can be point defects that occur in the crystalstructure at certain lattice points. Types of point defects in crystalhosts include vacancy defects where lattice points are left vacantresulting in a redistribution of charge densities and other propertiesassociated with the lattice members. For example, the crystal host canbe a bulk diamond host containing nitrogen vacancy (NV) centers asillustrated in FIG. 1A. The NV center 302 a shown along the crystaldirection in the diamond host 302 comprises a substitutional nitrogenatom (N) in a lattice site adjacent to a carbon vacancy V. The carbonatoms surrounding the NV center are labelled C. The NV center may haveat least four orientations corresponding to the location of thesubstitutional nitrogen atom with respect to the vacancy center V. Acollection of NV centers, such as the NV 302 a, within the bulk diamondhost 302 is referred to as an ensemble of NV centers and can be used tomeasure the magnitude and/or direction of magnetic, electric, and strainfields applied to the diamond host 302.

NV centers can exist in a charged state NV⁻ (or referred to simply asNV) or a neutral state NV⁰. An NV center in the charged state has anadditional electron: in addition to the five dangling bond electrons,one each from the carbon atoms and one pair of electrons between thevacancy and the nitrogen atom. NV⁻ and NV⁰ can be opticallydistinguished by their ZPLs (zero phonon line) at 637 nm and 575 nm,respectively.

NVs have a ground state, which is a spin triplet with three spinsublevels. The spin triplet has one spin state m_(s)=0 and two spinstates m_(s)=+1 and m_(s)=−1 as shown in the example in FIG. 1B. With noexternal magnetic field, the m_(s)=±1 energy levels are offset from them_(s)=0 level and the m_(s)=±1 levels are degenerate. Under a non-zeromagnetic field, the m_(s)=±1 levels are no longer degenerate as shown inthe inset in the energy level diagram in FIG. 1B. Individual NVs cantransition from the m_(s)=0 spin state to the m_(s)=±1 state byabsorbing microwave radiation of the frequency corresponding to thedifference between the two states.

NVs can also have an excited triplet state (e) as shown in FIG. 1B,including three spin sub-levels or fine structure levels m_(s)=0 andm_(s)=+1 and m_(s)=−1. NVs can directly transition from the ground stateg to the excited state e or vice versa, indicated by the squiggly arrowsin FIG. 1B, while retaining their spin state. The transition from theexcited state to the ground state can be effected by emitting a photonwhose energy corresponds to the energy gap between the energy levels ofthe transition, for the zero phonon line, or the energy gap minus theenergy of a phonon in the case of the phonon sidebands.

Some NVs may transition from the excited state e to the ground state gvia intermediate states s containing a (singlet) spin state m_(s)=0, asdepicted in FIG. 1B. This alternative path involves little to no photonemission, being mostly non-radiative, and largely decays to the m_(s)=0spin level of the ground state. Further, the fine structure levelsm_(s)=±1 in the excited state can have a higher likelihood of taking thenon-radiative path over the level m_(s)=0 in the excited state, asindicated by the solid and dotted arrows in FIG. 1B.

Due to the higher likelihood of the transition from excited m_(s)=±1 viathe non-radiative path, the intensity of optical emission can be used todetermine the spin state of one or more NVs. That is, the more NVs inthe m_(s)=±1 instead of the m_(s)=0 state, the lower the averagefluorescence intensity. Optically detected magnetic resonance (ODMR) canbe used to report the spin state of NVs from the fluorescence (ODMR)spectrum.

Optical stimulation of NV centers can cause the transition of a subsetof the NVs from the ground state to the excited state. FIG. 2A shows aschematic of the energy level diagram when an exemplary NV is opticallyexcited to transition from the ground (triplet) state A to the excitedtriplet state E, using excitation light of 532 nm. Such a statetransition mediated by optical excitation can allow the NVs to decayback to the ground state by emitting light, for example, by emittinglight of wavelength >637 nm, as shown in FIG. 2B. NVs can also decayback to the ground m_(s)=0 spin state via a predominantly non-radiativepath that involves no light emission, as discussed above. The path takencan depend on the spin state of the individual NVs upon excitation. Thedecay back to ground state is largely to the m_(s)=0 spin state, therebyenriching the population of NVs in the ground state with spin m_(s)=0.

The NVs in ground state or the excited state can further transitionbetween multiple energy levels defined by their hyperfine structure. Forexample, NVs in the ground or excited state m_(s)=0 electron spin statecan further transition to one of four hyperfine states of the m_(s)=±1electron spin states, m_(i)=+1, +0, −0, and −1 in descending order ofenergy. The ground state energy levels corresponding to the hyperfinemanifolds of an example NV center are shown in FIG. 2C. These finestructure transitions are driven by absorbing microwave radiation of thefrequency corresponding to the energy difference between the two states.The spins return to the m_(s)=0 spin state through radiative andnon-radiative pathways. In the case of optical pumping, return to them_(s)=0 state with the non-radiative pathways can result in reducedemitted photoluminescence and is therefore indicated by transientdecreases in the fluorescence intensity as read by an ODMR spectrum, asdiscussed below.

Sensitivity to Electric Field

The physical origin of the NV's sensitivity to electric field comes fromthe NV's optical excited state configuration, which is a moleculardoublet (³E) and is highly sensitive to electric fields according to theStark effect. Briefly, the presence of electric field induces a shift inthe spectral lines emitted by the NV center in response to statetransitions. But the effect cannot be measured optically in ambientconditions due to phonon-induced mixing. Within each orbital of themolecular doublet, however, the electric-field induced splitting of ahyperfine manifold (m_(i)=0) can be detected by utilizing the magneticspin-dependent fluorescence. Additionally, the highly electric-fieldsensitive ³E orbital mixes with the ground-state molecular orbital (³A₂)thereby inducing electric-field sensitivity for the ground state spinconfiguration of the NV centers.

The effect of electric field on the NVs in a bulk diamond host canresult in a shift in the spin-dependent fluorescence (ODMR) spectrum.Due to the effect of electric/strain fields, the signature decrease inthe photoluminescence signal from transitions associated with thehyperfine states +0 and −0 can undergo characteristic shifts. Theseelectric/strain field induced shifts in the ODMR spectrum are known asdetuning shifts can be simulated by building a numerical model of NVs.

The ODMR results from an example numerical simulation of an ensemble ofNVs is shown in FIG. 3. Specifically, FIG. 3 shows the ODMR spectrumsignal associated with the transitions to hyperfine states m_(i)=−0 and+0. The ODMR spectra obtained in the presence (E-field on) and absence(E-field off) of a switchable electric field are overlaid. As indicated,in the presence of electric field, the point of decrease in emittedfluorescence shifts to a difference MW frequency corresponding to ashift in energy level of the hyperfine state.

As shown, the signal associated with the hyperfine state m_(i)=−0 shiftsin the opposite direction in terms of frequency from the shift in signalassociated with the hyperfine state m_(i)=+0. In other words, thepresence of electric field leads to a change in the splitting of theenergy levels associated with hyperfine states thereby resulting inwidening of the fluorescence peak associated with the transitionsbetween the hyperfine states m_(i)=±0 and the ground state m_(s)=0.

FIG. 4A shows a generalized energy level diagram depicting how crystal(D), hyperfine (A), strain and electric fields (Π_(⊥)) can affect energysplitting in the ground state spin configurations of NVs in someembodiments of the present invention. The plot at right in FIG. 4A showsthe ground-state ODMR spectra of an example ensemble of NVs. This isshown magnified in FIG. 4B indicating the field splitting due totransverse electric field from an ensemble of NVs in the ground state(under a zero-bias (0 G) magnetic field) measured using one example ofthe apparatus presented in this application.

Zeroing the ambient magnetic field allows more precise measurement ofthe electric field or strain field of interest. This is because zeroingthe ambient magnetic field negates the effects of the magnetic field onthe NV hyperfine transitions. This isolates the effect of the electricfield from possible effects from the interplay between the electricfields and the magnetic field due to Zeeman Effect, as shown below inequation (1), which gives the form of the Hamiltonian describing theoptical ground and excited states of an NV:Ĥ _(NV)∝(D+d _(∥))Ŝ _(z) ² +B·ĝ·Ŝ+Ŝ·Â·Î   (1)

where D is the crystal field splitting, d_is the axial electric-fielddipole moment, B the magnetic field vector, S the spin-1 Paulioperators, and A the hyperfine tensor. Since the electric-field effecton the NV spin is significantly smaller than the natural crystal fieldsplitting, the electric-field dependence can be described as aperturbation to the Hamiltonian:{circumflex over (V)}∝d _(⊥)[Π_(x)(Ŝ _(x) Ŝ _(y) +Ŝ _(y) Ŝ _(x))+Π_(y)(Ŝ_(x) ² −Ŝ _(y) ²)]  (2)where d_(⊥) is the perpendicular electric-field dipole moment, Π_(x) andΠ_(y) being the sum of the strain and electric fields at the NV.

In diagonalizing the Hamiltonians and using perturbation theory, one canderive the microwave transition frequencies between the eigenstates:

$\begin{matrix}{{\omega \pm ( {\overset{harpoonup}{E},\overset{harpoonup}{B}} )} = {D + {k_{z}E_{z}} + {{3\frac{B_{\bot}^{2}}{2D}} \pm \sqrt{B_{z}^{2} + E_{\bot}^{2} - {\frac{1}{2}\sqrt{B_{z}^{2} + E_{\bot}^{2}}\frac{B_{\bot}^{2}}{2D}{\sin(\alpha)}{\cos(\beta)}} + ( \frac{B_{\bot}^{2}}{2D} )^{2}}}}} & (3)\end{matrix}$where tan(α)=E_(⊥)/B_(zy), β=2ϕ_(B)+ϕ_(E), tan(ϕ_(B))=B_(y)/B_(x), andtan(ϕ_(E))=E_(y)/E_(x).

The shot-noise sensitivity limits using an ensemble of ‘n’ NVs is givenby the following:

$\begin{matrix}{E_{\bot{,\min}} = {\frac{\sigma_{f,\min}}{d_{\bot}} \approx {\frac{1}{d_{\bot}}\frac{1}{C\sqrt{n\;\gamma\;\tau}}\frac{1}{T_{2}^{*}}}}} & (4)\end{matrix}$where upon substituting experimentally feasible values, one can arriveat a shot-noise limit approaching E_(⊥min_)=10⁻¹ Vcm⁻¹ Hz^(−1/2) for theground state, and E_(⊥min)=10¹ Vcm⁻¹ Hz^(−1/2) for the excited state.Stronger microwave excitation increases the spin contrast of the excitedstate ODMR improves, possibly yielding closer sensitivities for theground and excited states.

Electric/Strain Field Sensing

Methods of Sensing

FIG. 5 shows a process 100 of measuring an electric/strain field using acrystal host containing an ensemble of solid-state defects, for example,a bulk diamond host containing nitrogen vacancy (NV) centers assolid-state defects. The process 100 can be implemented to measure thelocal electric and strain fields experienced by the NV centers. This isshown by two process flow paths 111 and 151 in FIG. 5. If electric andstrain fields are present simultaneously, they can be de-convolved byproceeding along both flow paths 111 and 151 simultaneously and/orsequentially for different bias field types (strain v. electric field),amplitudes, and orientations. For example, the steps shown in FIG. 5 maybe combined and rearranged to: (1) apply bias strain field and measurethe electric field along the bias strain field direction; (2) apply abias strain field and measure the strain field along the bias strainfield direction; (3) apply a bias electric field and measure the strainfield along the bias electric field direction; and (4) apply a biaselectric field and measure the electric field along the bias electricfield direction. Other orders, combinations, and permutations are alsopossible.

In both flow paths, the process 100 includes a step 101 of applying azero-bias magnetic field to the sample so as to zero the ambientmagnetic field, including the Earth's magnetic field. Zeroing of themagnetic field can be carried out using changes in the ODMR spectrumassociated with fine structure transitions as shown in FIG. 6. Magneticfields of different orientations are applied to the sample with amagnetic field generator (e.g., Helmholtz coils) so as to reduce orminimize the ms=+/− splitting visible in the ODMR spectrum. The ensembleof NVs have eight crystallographic orientations, so the magnetic-fieldsensitive lines of all the NVs are minimized when there is no magneticfield in any direction.

As described above and shown in the upper trace of FIG. 6, under azero-bias magnetic field, the spin states m_(s)=±1 become degenerateresulting in a single fluorescence change associated with a singleenergy level. Thus, under a zero-bias magnetic field, any break in thedegeneracy is due to another field, such as the applied electric orstrain field. In contrast, a non-zero ambient magnetic field breaks thisdegeneracy, as shown in the lower trace of FIG. 6, which is for a netmagnetic field of 43 Gauss. Having a magnetic field break the degeneracymakes it more difficult, if not impossible, to make sensitivemeasurements of the electric field or strain field experienced by thesolid state defects in the crystal.

Zeroing of magnetic field can be carried out using gradient descent,using a custom built or commercially available digital lock-in amplifier(LIA). A custom-built LIA can incorporate an on-board processor (forexample, a field programmable gate array (FPGA)) to perform bothmicrowave (MW) waveform generation and lock-in detection for ODMRmeasurements (step 117, below). The MW waveform can be sent to thediamond upon being generated digitally in the FPGA by direct samplingwith a high speed Digital-to-Analog Converter (DAC, running at 2.4Gsamples/sec set by external clock feed in, in the 3rd Nyquist zone,direct synthesis). The digitally generated MW waveform can be just theraw waveform or can be suitable mixed or modulated as required to suitexcitation of the desired crystal host with the desired solid-statedefects.

For the measurement of local electric field following the flow path 111,the method 100 can also include an optional step 113 (indicated by theblock within dotted lines) of applying a non-zero bias electric field tothe sample, for example, by applying a voltage to electrodes inelectrical communication with the sample. These electrodes can be formedby plating the host (e.g., diamond) on two sides with metal. The sidesare chosen such that the electric field applied has equal projectiononto all eight crystallographic orientations of NVs (e.g., as shown inFIG. 8B). The application of non-zero bias electric field can be used todetermine the magnitude of the applied electric field and if thedirection of the applied electric field matches the direction of thebias electric field.

The process 100 along path 111 include applying the electric field to bemeasured (step 115) if the electric field to be measured is notintrinsic to the material in which the diamond host is disposed. Theelectric field can be applied using any suitable technique. For example,the field can be applied by connecting electrodes made of a suitableconductive material to the crystal host and applying the electric fieldvia the electrodes. Additionally, if particles embedded within thecrystal host experience an intrinsic electric field, this intrinsicelectric field can be measured too by comparing electric fields indifferent locations. This can be done by using a confocal microscope tostudy the entire diamond to determine the amount of intrinsic electricfield local to each NV. Once this is accomplished, the diamond samplecontaining the entire NV ensemble can be used for bulk sensing ofelectric fields.

For the measurement of local strain field, the method 100 can follow thepath 151 and includes an optional step 153 (indicated by the blockwithin dotted lines) of applying a non-zero bias strain field to thesample, for example, using screws or piezo electric transducers. As longas pressure is exerted along the sample's strong crystal axis, it ispossible to apply high strain to the sample without breaking the sample.(This is equivalent to applying a bias electric field to the NVs.) Theapplication of a non-zero bias strain field can be used to determine themagnitude and if the direction of the measured strain field matches thebias strain field direction.

The path 151 includes applying the strain field (step 155), if thestrain field to be measured is not intrinsic to the material in whichthe diamond host is disposed. The strain field can be applied using anysuitable strain or force transferring mechanism, for example, screws orpiezo electric transducers. For example, the field can be applied byusing any deformation apparatus. Additionally, if particles embeddedwithin the crystal host experience an intrinsic strain field, thisintrinsic field can be measured too by comparing strains in differentlocations, e.g., using the confocal microscopy technique disclosedabove.

Further, method 100 can include, as part of both flow paths 111 and 151,measuring the optically detected magnetic resonance (ODMR) spectrum ofthe sample (step 117). This ODMR spectrum shows how the hyperfine spinstate transitions of the solid-state defects are affected by theelectric field or strain field being measured. Step 117 can includesub-steps involved in measuring the ODMR of a sample. For example, step117 can include illuminating the sample with excitation light, applyingtuned microwave radiation to the sample, collecting photoluminescenceemitted by the sample, processing the collected photoluminescence data,and generating an ODMR spectrum resulting from the data.

The optical excitation light can be of any suitable form to opticallyexcite all the NV centers in the beam path. For example, the light canbe of any suitable wavelength and any suitable pulse shape that caninduce transitions of the spin triplet to the excited state E asdiscussed below.

Measuring the ODMR spectrum can include irradiating the samplecontaining the crystal host with microwave (MW) radiation in anysuitable fashion so as to tune to the zero-splitting frequency of allthe NV centers in the sample to measure, for example, by reducing orminimizing the fluorescence signal.

Measuring the ODMR spectrum can include collecting the photoluminescenceand/or the fluorescence emitted by the NV centers using any suitablecombination of optical and/or optoelectronic elements to gather dataabout the optical emission of the NV centers concurrent with MWirradiation and looking for effects that depend on the presence of bothoptical and MW radiation.

Measuring the ODMR spectrum in step 117 can also include processing thecollected photoemission data concurrent with the MW radiation andgenerating a resulting ODMR spectrum plot as discussed below.

For electric field sensing, following flow path 111, the method 100 canfurther include a step 119 of analytically estimating the magnitude ofelectric field sensed by the sample containing the solid-state defectsfrom the measured ODMR spectrum. The method 100 can further include anoptional step 121 of estimating the direction of electric field inaddition to the magnitude from step 119, for example, by comparing themeasurements made with different defect orientations. The device issensitive parallel to the direction of the bias electric/strain field,so it can be used to measure the magnitude of the applied field fordifferent bias electric/strain directions to determine the orientationof the applied field.

The following table shows differences and similarities between expectedelectrometry from example calculations under zero magnetic field usingthe ground and excited states of the NV. It lists expectedelectric-field induced shift in the ensemble of spin-dependentfluorescence spectra.

Ground State Excited State Lande' g factor (g) 2 2 Lifetime (T₁)milliseconds nanoseconds Crystal Field Splitting (D) 2.8 GHz 1.4 GHz N¹⁴Hyperfine splitting (A)   2 MHz  40 MHz Transverse field Sensitivity (d)17 Hz/(V/cm) ~400 Hz/(~/cm)

Similarly, to sense strain fields, following path 151, the method 100can include step 159 of estimating the magnitude of strain fieldexperienced by the NC centers and optionally step 161 of determining thedirection of sensed strain field, for example, by comparing differentdefect orientations.

Apparatus for Sensing Electric/Strain Field

FIG. 7 shows a block diagram an apparatus 200 configured to senseelectric field (or strain field) using the method 100 shown in FIG. 5.The apparatus 200 includes a solid-state host 202 containing an ensembleof color centers or solid-state defects (for example, nitrogen vacancycenters in a bulk diamond host). Other examples of solid-state defectsinclude the ST1 center in diamond, the spin 3/2 center in siliconcarbide, and spin-defects in the two-dimensional Van der Waals materialhexagonal boron nitride. Newly discovered defects may also yield higherspin contrast, which can lead to faster readout speeds and highersensitivity in units of the minimum detectable electric field per squareroot of bandwidth.

The apparatus 200 includes a magnetic field generator 204. The magneticfield generator 204 can be used to apply a zero-bias magnetic field, forexample, using three-axis Helmholtz coils 236 to generate and deliver auniform magnetic field to the host 202, as in step 101 in the process100 of FIG. 5. The field generator 204 can provide a magnetic field ofopposite sign and equal magnitude in order to zero the existing ambientmagnetic field, for example, by reducing or minimizing the hyperfinem_(s)=+/−1 splitting. The field generator 204 can also include one ormore suitable sensor(s) to measure the ambient magnetic field (includingthe Earth's magnetic field) experienced by the sample 202 containing thesolid-state defects. The magnetic field generator 204 may includecontrol systems and processors (e.g., processor 208) coupled to thesensors and Helmholtz coils 236 to provided appropriate feedback ifdesired.

The apparatus 200 can include a microwave generator 216 that appliesmicrowave radiation tuned to the zero-field splitting frequency of thesolid-state defects in the sample 202. The microwave source 216 can beconnected to appropriate control systems and processors (e.g., processor208) that control the process flow and operation of other associatedparts in the assembly to provide smooth operation of the assembly. Themicrowave radiation may be applied through a stripline 220 or any othersuitable structure, like a wire or an antenna, which may be electricallyconnected to the solid-state host 202 though patterning on a printedcircuit board (PCB). The stripline 220 may also be patterned directly onthe host 202. The stripline may be in any shape; for example, it cantake the shape of the character “Omega.”

The apparatus 200 can also include a light source 214 thatsimultaneously excites some, all, or substantially all of thesolid-state defects in the host 202 (while also spin-polarizing to thems=0 state). The light source 214 may be a laser or LED or filteredwhite light source that emits lights at any suitable wavelength. Forexample, the emitted light may be of wavelength 532 nm, which is optimalfor NV centers. When using other solid-state defects, the light sourcemay be chosen with appropriate wavelength, for example, if siliconvacancies in diamond are used a suitable light source that emitscoherent light at a wavelength of about 737 nm may be chosen. The lightsource 214 can be operated in continuous wave or in pulsed mode. Thelight output may be modulated in properties like intensity,polarization, and phase and the light may be shaped spatially and/orrouted following any suitable beam path using suitable optical elementssuch as mirrors and lenses to be directed onto the sample to bemeasured. The light source 214 may be connected to appropriate controlsystems and/or processors (e.g., processor 208) with or without feedbackfrom the rest of the apparatus in order to generate the ODMR spectrum.

The apparatus 200 can also include an optical detector 206 andassociated detection optics 222 for collecting light (fluorescence orphotoluminescence) emitted by the solid-state defects in the sample 202.For example, the optical detector 206 may be a silicon photodetector. Itcan also be a photodiode or a photomultiplier tube or any other devicethat collects and transduces light to electrical signals. The collectionoptics 222 may include lenses placed before the detector 206 to ensuregood signal collection. The collection optics can include light filters,for example, colored glass filters or dielectric filters thatselectively pass or block light based on wavelength, to ensure thatlight of the desired wavelength—the wavelength corresponding to thephotoluminescence emitted by the NV centers—is captured with minimalnoise or background emission. Collection optics 222 may also includesuitable reflectors and spatial filters to direct the collected light tothe detector 206.

The apparatus 200 can also include an electric field generator 212and/or a strain field generator 238 (e.g., screws or a piezo-electricelement) to introduce compensatory electric and/or strain fields, forexample, to reduce or minimize the 0+, 0− splitting as discussed above.

The apparatus 200 can also include a processor 208 that may be connectedto the optical detector 206 and/or other components. For example, inaddition to the optical detector the processor 208 can be connected toand control the light source 214, the microwave generator 216, and themagnetic field generator 204 for generating and analytically processingthe ODMR spectrum. The same or similar processor can control the otherelements of the apparatus 200. For example, one or more processors like208 can be used to control the microwave generator 216, magnetic fieldgenerator 204, the light source 214, the optical detector 206, and theoptional elements like the electric field generator 212. Theseprocessors may be operated to control the elements either together in anopen-loop configuration, together in a closed-loop configuration, orindividually.

Integrated Electric/Strain Field Sensor

Some or all of the elements of the apparatus describe in FIG. 7 may beassembled in an integrated configuration 500 as shown in FIGS. 8A and8B. For example, the bulk host can be a gold-coated diamond host 502with an ensemble of NVs as shown in FIGS. 8A and 8B. The excitationlaser source can be a 532 nm laser 514. A magnetic field generator 504,including magnetic field coils surrounding the host 502, applies acompensatory magnetic field so that the solid-state defects in the host502 experience a zero-bias magnetic field. For example, the magneticfield generator 504 may include copper coils in parallel hoopssurrounding the host 502.

Microwave radiation can be provided from a microwave generator 516 via astripline 520 in the shape of the character “omega” close to the diamondhost 502. The integrated assembly 500 can include light collectionoptics, including focusing lenses 524 and optical filters 526 thatcollect and filter light emitted by the ensemble of NVs in the crystalhost 502 in response to MW and optical excitation during ODMR spectrumgeneration. The apparatus 500 can also include a photodetector 506 thattransduces the collected light into an electrical signal, which can berecorded and processed during operation to produce an indication of theelectric field or strain applied to the host 502. The detector 506 canin turn be connected to and controlled by a processor 508, which handlesthe operation of detector 506 and processes the data gathered by the 506detector for further analysis, to generate an ODMR spectrum, forexample.

The elements of the apparatus describe in FIG. 7 may also be assembledin a laboratory configuration 600 as shown in FIG. 9. The assembly 600can be similar in structure and/or function to any of the assembliesdescribed herein, such as, for example, the assembly 200 shown in FIG. 7and the integrated assembly 500 shown in FIG. 7. For example, theassembly 600 can include a crystal host 602 (shown in the photograph), amicrowave generator (or a waveform generator) 616, a stripline 620 fordelivery of microwave radiation, and a laser source 614 to excite thecrystal at 532 nm. The assembly 600 can also include collection optics622, including one or more collecting lenses 624 and one or more opticalfilters 626, and an optical detector 606. The crystal host 602 issurrounded by Helmholtz coils 636 that apply a magnetic field to thehost 602 such that the solid-state defects in the host 602 are under azero-bias magnetic field.

The assembly 600 can also include a transimpedance amplifier and lock-inamplifier 628 that receives the electrical signal from the opticaldetector 606. The assembly 600 can be configured such that the output ofthe amplifier is fed through an analog-to-digital converter (ADC) 632into a waveform generator 616 to provide adaptive feedback, as shown inFIG. 9. The output of the waveform generator 616 may in turn be passedthrough an amplifier 630 and the resulting microwave radiation mayapplied to the crystal host 602 via the stripline 620. The assembly canbe configured such that elements are mounted on an optical table 634.Elements mounted are shown in magnified view in the inset in FIG. 9.

Experimental Electric Field Measurements Under Zero-Bias Magnetic Field

One variation of the method discussed above for measuring electric fielduses an ensemble of NVs with the applied electric field having an equalprojection on all eight classes of NVs and without any magnetic field (0G). In this method, one can calculate the expected electric-fieldinduced shift in the ensemble of spin-dependent fluorescence spectra.

In one example implementation of the presented apparatus and methods, anensemble of low-strain, about 10¹⁰ NVs were addressed for low frequencyelectric-field spectroscopy. Optical excitation was provided with asingle-pass of 532 nm incoherent beam through a 3 mm×3 mm×0.32 mmdiamond (Type IIA, 1 ppb N, Element 6) with a <100> crystal orientationson the top and bottom 3 mm×3 mm surfaces. The bias and signal electricfields were applied across evaporated electrodes comprised of 10nanometers of titanium, and 100 nm of gold (as depicted in FIGS. 8A and8B). Using a complete set of Helmholtz coils (shown in FIG. D), thediamond electrometer was operated in a zero-bias magnetic field regimefor optimal sensitivity to electric fields. Using the NV's highsensitivity to magnetic fields, the outer two transitions could be usedto zero-the magnitude field across the entire diamond to within at least30 nT of accuracy. Measurements were taken with a custom-built digitallock-in amplifier (LIA), which was driven by an Agilent signalgenerator.

FIGS. 10A and 10B show results from a single NV in the ground state andin the excited-state, respectively, measured at zero magnetic field.FIG. 10A shows the ODMR spectrum (left) and the associated signal fromthe lock-in amplifier (LIA). The portions of the spectrum as well as theLIA signal corresponding to transitions from the hyperfine state −0 and+0 are indicated by arrows. The arrows also indicate hyper finetransitions that would be split by transverse electric field. The0-Gauss magnetic field was aligned to within 900 Hz (30 nT) for all fourorientations of the NV in the diamond lattice.

Similarly, FIG. 10B shows the ES-ODMR (excited state ODMR) spectrum onthe left axis and the LIA signal on the right axis, overlaid.

As seen in Eqn. 3 (above), the intrinsic strain distribution in theensemble of NVs determines the optimal operating bias voltage of thediamond electrometer. To have an accurate measurement of the straindistribution, a model can be derived to account for an isotropicdistribution of strain with a Gamma function distribution of strainamplitudes. This model can be expressed in terms of the ensemble ODMRspectrum:

${I_{\pm}(f)} = {1 - {\frac{1}{24\;\pi}{\int_{0}^{2\;\pi}{\int_{0}^{\pi}{\int_{0}^{\infty}{\frac{C_{o}{P(x)}}{{4( \frac{f - ( {D_{o} \pm {k_{\bot}E_{o}x\;{\sin(\theta)}}} )}{\Delta\; f_{o}} )^{2}} + 1}x^{2}{\sin(\theta)}{dxd}\;\theta\; d\;\phi}}}}}}$where f is the frequency of the applied MW field, C_(o) is the ensembleaverage of the ODMR contrast, D_(o) is the ensemble average of thecrystal field, P(x)=xe^(−x) is the (2,1) Gamma probability distributionof the strain magnitude, E_(o) is the ensemble average of the strainmagnitude, Δf_(o) is the full-width half-maximum of single-NVline-widths, θ denotes the strain vector's altitude angle away from theNV⁻ symmetry axis, and ϕ is the strain vector's azimuthal angle. Byfitting the ODMR spectra over several MW driving amplitudes, an examplemodel consistently predicted an amplitude of electric field strain to beII_(⊥)˜170 kHz.

FIGS. 11A-11C show calculated and experimentally measured changes inODMR spectrum, from the example calculations and experiments describedabove. Specifically, FIG. 11A shows experimentally measured ODMR (dottedlines) overlaid with numerical fits (solid lines) to a model whichaccounts for how transverse electric fields affect an ensemble of NVs,according to equations above, where the electric field is the appliedvoltage divided by the 320 μm electrode spacing. Each pair of lines(dotted and solid) corresponds to a different amplitude of MW drive.FIG. 11B shows the results from numerical simulations resulting incalculated ODMR spectrums at various applied voltages across a 320 μmthick diamond host. FIG. 11C shows the numerically calculated shifts, ordetuning, in the strain transitions as a function of applied voltage.

Since it was possible to accurately measure the transition shift, theapplied voltage, and the thickness of the diamond, it was also possibleto measure the value of d_(⊥) very accurately. By applying successivelyincreasing voltages and monitoring the transition shift (shown in FIG.12), one can deduce the value of d_(⊥).

The main plot in FIG. 12 shows ground-state frequency shifts (detunings)due to incremental, step-wise increases in electric-field applied to anNV ensemble at zero magnetic field as a function of time. In this case,the ground-state detunings are more sensitive and have less noise thanthe excited-state detunings. The plot at right shows the ODMR spectrumof the ground state at the last time step. By comparing the step-wisedetuning shifts of the electric-field transitions with the appliedvoltages, it is possible to accurately deduce the ensemble average valueof d_(⊥) to be 10 Hz/(V/cm).

FIG. 13 is a plot showing the electric field sensitivity of an ensembleof NVs under zero-bias magnetic field as a function of applied voltage.As described above, lines 1 and 2 correspond to fits of measureddetuning shifts from transitions associated with the hyperfine states +0and −0 in response to increasing levels of applied electric fields.Lines 3 and 4 indicate points from measurements of shifts associatedwith the hyperfine states +1 and −1.

FIG. 14 shows an Allan stability plot corresponding to the detuningshifts from transitions associated with the hyperfine state −0. This canbe used to determine the electric sensitivity at different frequencies.The peak at 1 Hz is due to a sinusoidal applied field. The frequencyroll-off at 10 Hz is due to the lock-in time constant.

The noise floor of the diamond electrometer can be accurately measuredby applying a 1 Hz AC voltage across the sensor with a peak-to-peakvoltage of 5 Volts and by monitoring both channels of the LIA todetermine both amplitude and phase fluctuations. Using common-mode noiserejection one can remove any temperature fluctuations in themeasurements down to at least 1 mK. The results from using oneimplementation of an electrometer according to the present applicationare shown in FIGS. 16-19.

FIGS. 15A and 16A show time traces of channel 1 (strain−transition) andchannel 2 (strain+transition), respectively, of the noise floormeasurements. Each LIA channel corresponds to one transition. In orderto measure the electric field independently of the temperature, twotransitions (and therefore two LIA channels) should be monitored. FIGS.15B and 16B show noise power spectral density plots of the traces inFIGS. 15A and 16A, respectively. The noise floor is shot-noise limited(black line), while there is a peak at the 1 Hz of 110 Hz/√Hz.

FIG. 17A shows the noise spectral density of the direct sum of the twochannels of the LIA, which corresponds to any common-mode fluctuations.The noise floor is shot-noise limited (black line). FIG. 17B shows thenoise spectral density of the direct difference of the two channels,which corresponds to electric-field fluctuations. The noise floor isshot-noise limited (black line), while there is a peak at the 1 Hz of212 Hz/√Hz. This indicates that the difference between the two channelsimproves the SNR by the expected value of √2.

FIG. 18A shows a time trace with the real-time measurement of appliedelectric field using transitions from the hyperfine state +0. Theresults were from measuring excited-state shifts due to incremental,step-wise electric-field applied to an NV ensemble at zero magneticfield. The sensitivity of this measurement now approached 300V/cm/√Hz.

FIG. 18B shows excited state shifts measured from both transitionsstates, simultaneously.

In other implementations the crystal host can be from diamond sampleswith higher densities of NVs. The number/density of NVs can bemanipulated to increase many fold for example by 10 to 100 times toaccordingly modify the readout.

The crystal can also be chosen to have color centers with a higherelectric-field shift in the ground state. In the case of the NV, theground state has an electric field shift that is orders of magnitudesmaller than that in the excited state. This is because the ground statehas no intrinsic sensitivity but relies on a small mixing with theexcited state. A color center with lower symmetry might be expected tohave greater mixing and therefore greater electric sensitivity.

Further, electric fields with higher spatial resolution can be imagedusing low-strain nanodiamonds under zero-magnetic field regime which canconfer benefits of temperature and electric field sensing.

The excitation light source can be pulsed following protocols of pulsedexcitation. Pulsed spectroscopic techniques can be employed similar tothose applied to magnetometry, which are in turn are similar to thoseused in nuclear magnetic resonance imaging (MM), but which have not yetto electrometry for improving the sensitivity of an NV electrometer. Insome implementations, composite pulse sequences, such as BB(n) or OB(n),can be used to accommodate inhomogeneities. Composite pulse techniquesoffer a robust alternative to engineered field profiles. By combining anumber of “elementary” radio-frequency pulses, it is possible todecouple gate fidelity from the control field amplitude to any desireddegree. The recently developed OBn family of sequences offers superiorperformance over the widest possible range of control amplitudes,enabling precise ensemble control.

Additionally, the nuclear spin can be used for sensing by using acombination of nuclear-spin polarization techniques with using thelong-lived coherence of the nuclear spin as an ancillary sensor. Forexample, rare earth doped crystals show electric shifts on the order of10's of kHz/(V/cm). While the spin state of a single nucleus cannot beread out directly, a nearby NV or ST1 can readout individual nuclearspins with a high fidelity.

CONCLUSION

While various inventive embodiments have been described and illustratedherein, those of ordinary skill in the art will readily envision avariety of other means and/or structures for performing the functionand/or obtaining the results and/or one or more of the advantagesdescribed herein, and each of such variations and/or modifications isdeemed to be within the scope of the inventive embodiments describedherein. More generally, those skilled in the art will readily appreciatethat all parameters, dimensions, materials, and configurations describedherein are meant to be exemplary and that the actual parameters,dimensions, materials, and/or configurations will depend upon thespecific application or applications for which the inventive teachingsis/are used. Those skilled in the art will recognize, or be able toascertain using no more than routine experimentation, many equivalentsto the specific inventive embodiments described herein. It is,therefore, to be understood that the foregoing embodiments are presentedby way of example only and that, within the scope of the appended claimsand equivalents thereto, inventive embodiments may be practicedotherwise than as specifically described and claimed. Inventiveembodiments of the present disclosure are directed to each individualfeature, system, article, material, kit, and/or method described herein.In addition, any combination of two or more such features, systems,articles, materials, kits, and/or methods, if such features, systems,articles, materials, kits, and/or methods are not mutually inconsistent,is included within the inventive scope of the present disclosure.

Also, various inventive concepts may be embodied as one or more methods,of which an example has been provided. The acts performed as part of themethod may be ordered in any suitable way. Accordingly, embodiments maybe constructed in which acts are performed in an order different thanillustrated, which may include performing some acts simultaneously, eventhough shown as sequential acts in illustrative embodiments.

All definitions, as defined and used herein, should be understood tocontrol over dictionary definitions, definitions in documentsincorporated by reference, and/or ordinary meanings of the definedterms.

The indefinite articles “a” and “an,” as used herein in thespecification and in the claims, unless clearly indicated to thecontrary, should be understood to mean “at least one.”

The phrase “and/or,” as used herein in the specification and in theclaims, should be understood to mean “either or both” of the elements soconjoined, i.e., elements that are conjunctively present in some casesand disjunctively present in other cases. Multiple elements listed with“and/or” should be construed in the same fashion, i.e., “one or more” ofthe elements so conjoined. Other elements may optionally be presentother than the elements specifically identified by the “and/or” clause,whether related or unrelated to those elements specifically identified.Thus, as a non-limiting example, a reference to “A and/or B”, when usedin conjunction with open-ended language such as “comprising” can refer,in one embodiment, to A only (optionally including elements other thanB); in another embodiment, to B only (optionally including elementsother than A); in yet another embodiment, to both A and B (optionallyincluding other elements); etc.

As used herein in the specification and in the claims, “or” should beunderstood to have the same meaning as “and/or” as defined above. Forexample, when separating items in a list, “or” or “and/or” shall beinterpreted as being inclusive, i.e., the inclusion of at least one, butalso including more than one, of a number or list of elements, and,optionally, additional unlisted items. Only terms clearly indicated tothe contrary, such as “only one of” or “exactly one of,” or, when usedin the claims, “consisting of,” will refer to the inclusion of exactlyone element of a number or list of elements. In general, the term “or”as used herein shall only be interpreted as indicating exclusivealternatives (i.e. “one or the other but not both”) when preceded byterms of exclusivity, such as “either,” “one of,” “only one of,” or“exactly one of” “Consisting essentially of,” when used in the claims,shall have its ordinary meaning as used in the field of patent law.

As used herein in the specification and in the claims, the phrase “atleast one,” in reference to a list of one or more elements, should beunderstood to mean at least one element selected from any one or more ofthe elements in the list of elements, but not necessarily including atleast one of each and every element specifically listed within the listof elements and not excluding any combinations of elements in the listof elements. This definition also allows that elements may optionally bepresent other than the elements specifically identified within the listof elements to which the phrase “at least one” refers, whether relatedor unrelated to those elements specifically identified. Thus, as anon-limiting example, “at least one of A and B” (or, equivalently, “atleast one of A or B,” or, equivalently “at least one of A and/or B”) canrefer, in one embodiment, to at least one, optionally including morethan one, A, with no B present (and optionally including elements otherthan B); in another embodiment, to at least one, optionally includingmore than one, B, with no A present (and optionally including elementsother than A); in yet another embodiment, to at least one, optionallyincluding more than one, A, and at least one, optionally including morethan one, B (and optionally including other elements); etc.

In the claims, as well as in the specification above, all transitionalphrases such as “comprising,” “including,” “carrying,” “having,”“containing,” “involving,” “holding,” “composed of,” and the like are tobe understood to be open-ended, i.e., to mean including but not limitedto. Only the transitional phrases “consisting of” and “consistingessentially of” shall be closed or semi-closed transitional phrases,respectively, as set forth in the United States Patent Office Manual ofPatent Examining Procedures, Section 2111.03.

The invention claimed is:
 1. A method of measuring an electric fieldwith an ensemble of color centers in a solid-state host, the methodcomprising: applying a zero-bias magnetic field to the ensemble of colorcenters, the zero-bias magnetic field reducing splitting of an energylevel of the ensemble of color centers caused by an ambient magneticfield experienced by the ensemble of color centers; disposing theensemble of color centers in the electric field while the zero-biasmagnetic field is applied to the ensemble of color centers; measuring anoptically detected magnetic resonance (ODMR) spectrum of the ensemble ofcolor centers, the ODMR spectrum indicating a shift in a frequency of aground state and/or an excited state of the ensemble of color centerscaused by the electric field; and estimating a magnitude of the electricfield based on the ODMR spectrum.
 2. The method of claim 1, whereinapplying the zero-bias magnetic field to the ensemble of color centerscomprises cancelling the ambient magnetic field.
 3. The method of claim2, wherein cancelling the ambient magnetic field comprises cancellingthe Earth's magnetic field.
 4. The method of claim 1, wherein measuringthe ODMR spectrum comprises: illuminating the ensemble of color centerswith light selected as to spin-polarize the ensemble of color centers;applying a microwave to the ensemble of color centers; and detectingphotoluminescence emitted by the ensemble of color centers.
 5. Themethod of claim 4, wherein applying the microwave field comprisesguiding the microwave field with a stripline in electromagneticcommunication with the solid-state host.
 6. The method of claim 1,wherein estimating the magnitude of the electric field comprisesestimating a shift in the frequency of the ground state of the ensembleof color centers caused by a change in temperature of the ensemble ofcolor centers.
 7. The method of claim 1, wherein estimating themagnitude of the electric field comprises estimating the magnitude overa frequency range of 0 Hz to 100 Hz with a shot-nose limited sensitivityof 1 V/cm √Hz.
 8. The method of claim 1, further comprising: estimatinga direction of the electric field based on the ODMR spectrum.
 9. Themethod of claim 1, further comprising: estimating a noise spectraldensity of electric field fluctuations within the solid-state host basedon the ODMR spectrum.
 10. An electrometer comprising: a solid-state hosthaving an ensemble of color centers; a magnetic field generator, inelectromagnetic communication with the ensemble of color centers, toapply a zero-bias magnetic field to the ensemble of color centers, thezero-bias magnetic field reducing splitting of an energy level of theensemble of color centers caused by an ambient magnetic fieldexperienced by the ensemble of color centers; a detector, in opticalcommunication with the ensemble of color centers, to measure anoptically detected magnetic resonance (ODMR) spectrum of the ensemble ofcolor centers while the ensemble of color centers is subject to thezero-bias magnetic field, the ODMR spectrum indicating a shift in afrequency of a ground state and/or an excited state of the ensemble ofcolor centers caused by an electric field; and a processor, operablycoupled to the detector, to estimate a magnitude of the electric fieldbased on the ODMR spectrum.
 11. The electrometer of claim 10, whereinthe ensemble of color centers comprises at least 10¹⁰ color centers. 12.The electrometer of claim 10, wherein the magnetic field generator isconfigured to cancel the ambient magnetic field.
 13. The electrometer ofclaim 10, further comprising: a light source, in optical communicationwith the solid-state host, to illuminate the ensemble of color centerswith light selected to spin polarize the ensemble of color centers; anda microwave source, in electromagnetic communication with thesolid-state host, to apply a microwave to the ensemble of color centers.14. The electrometer of claim 13, further comprising: a stripline,bonded to the solid-state host and in electrical communication with themicrowave source, to guide the microwave.
 15. The electrometer of claim10, wherein the processor is configured to estimate a shift in thefrequency of the ground state of the ensemble of color centers caused bya change in temperature of the ensemble of color centers.
 16. Theelectrometer of claim 10, wherein the processor is configured toestimate the magnitude of the electric field over a frequency range of 0Hz to 100 Hz with a shot-nose limited sensitivity of 1 V/cm √Hz.
 17. Theelectrometer of claim 10, wherein the processor is configured toestimate a direction of the electric field based on the ODMR spectrum.18. The electrometer of claim 10, wherein the processor is configured toestimate a noise spectral density of electric field fluctuations withinthe solid-state host based on the ODMR spectrum.
 19. The electrometer ofclaim 10, further comprising: a sensor, in electromagnetic communicationwith the ensemble of color centers, to sense the ambient magnetic field.20. The method of claim 1, further comprising: measuring a magnitude anddirection of the ambient magnetic field.
 21. The method of claim 20,wherein measuring the magnitude and direction of the ambient magneticfield comprises sensing a hyperfine splitting of the ensemble of colorcenters.
 22. The method of claim 1, further comprising: applying a biasstrain field to the ensemble of color centers while measuring theelectric field in a direction of the bias strain field.